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| Datasheet File OCR Text: |
| NTE337 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE337 is a silicon NPN transistor in a T72H type package designed primarily for use in large- signal amplifier driver and pre-driver stages. This device is intended for use in industrial communications equipment operating at frequencies to 80MHz. Features: D Specified 12.5V, 50MHz Characteristics: Output Power = 8W Minimum Gain = 10dB Efficiency = 50% Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage V(BR)CEO IC = 200mA, IB = 0, Note 1 V(BR)CES IC = 50mA, VBE = 0, Note 1 Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)EBO IE = 5mA, IC = 0 ICES ICBO ON Characteristics DC Current Gain hFE IC = 500mA, VCE = 5V 5 - - VCE = 15V, VBE = 0, TC = +125C VCB = 15V, IE = 0 18 36 4 - - - - - - - - - - 10 1 V V V mA mA Symbol Test Conditions Min Typ Max Unit Note 1. Pulsed through a 25mH inductor. Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Dynamic Characteristics Output Capacitance Cob VCB = 15V, IE = 0, f = 0.1 to 1MHz - - 90 pF Symbol Test Conditions Min Typ Max Unit Parameter Symbol Test Conditions Min Typ Max Unit Functional Tests (VCC = 12.5V unless otherwise specified) Common-Emitter Amplifier Power Gain Power Output Collector Efficiency GPE Pout h Pout = 8W, f = 50MHz Pin = 800mW, f = 50MHz Pout = 8W, f = 50MHz 1.040 (26.4) Max .520 (13.2) 10 8 50 - - - - - - dB W % C .230 (5.84) E E B .100 (2.54) .385 (9.8) Dia .005 (0.15) .168 (4.27) 8-32-NC-3A .750 (19.05) Wrench Flat |
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